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Gan P, 1/28 Ridge St, Nambucca Heads

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Gan P at 36 Wallace Street in Macksville, NSW

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PDF Demonstration of nonpolar m -plane vertical GaN-on-GaN p-n power

Currently, the majority of vertical GaN-on-GaN power diodes such as p-n diodes5,6 and transistors such as current aperture vertical electron transistors (CAVET)8 have been demonstrated on polar c-plane substrates [Fig. 1(a)]. On the other hand, growing devices on nonpolar crystal orientations [Fig.

p ZrO 2 p-GaN p-GaN p-GaN

n-GaN. InGaN. q z 0004rlu.

GAN P. — collections of the user's images in Yandex.Collections

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High-performance self-powered deep ultraviolet photodetector based...

In this study, self-powered MoS2/GaN p-n heterojunction PDs were constructed, which exhibited high sensitivity to DUV light illumination and pronounced Moreover, the MoS2/GaN p-n heterojunction PD could operate with excellent stability and repeatability in a wide frequency range over 10 kHz.

A Review of Dry Etching of GaN and Related Materials

GaN p-i-n UV photodetectors with an optically active surface area of 0.5 mm2 and a junction area of 0.59 mm2 have been fabricated on 3-inch diameter GaN p-i-n epitaxial wafers and characterized. Wafer maps of photodetector peak responsivity (maximum of 0.194 A/W at 359 nm) indicated that more than...